Ram samsung 8gb DDR5 4800HZ

1350 EGP

Samsung 8GB DDR5 4800MHz RAM

The Samsung 8GB DDR5 4800MHz RAM module offers high performance and efficiency, making it ideal for modern computing needs. With faster speeds, increased capacity, and improved reliability, it enhances overall system performance, suitable for both gaming and professional applications.

  • Memory Capacity: 8GB
  • Memory Type: DDR5
  • Speed: 4800 MHz
  • Voltage: 1.1V
  • Form Factor: UDIMM
  • Pin Count: 288-pin
  • CAS Latency: CL40
  • Features: Non-ECC, Unbuffered, On-Die Error-Correction Code (ODECC)
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الوصف

Samsung 8GB DDR5 4800MHz RAM

The Samsung 8GB DDR5 4800MHz RAM module is designed to meet the demands of modern computing environments. With its advanced DDR5 technology, it offers significant improvements over its DDR4 predecessors, including higher data transfer rates and enhanced power efficiency.

The memory module operates at a speed of 4800 MHz, providing fast and responsive performance for a wide range of applications, from gaming to professional workloads. The increased speed and bandwidth help in reducing latency and improving overall system responsiveness, ensuring smooth multitasking and efficient data processing.

Featuring a voltage of 1.1V, the Samsung DDR5 RAM is not only powerful but also energy-efficient, reducing power consumption by up to 30% compared to DDR4 modules. This makes it an environmentally friendly choice, contributing to lower overall power usage in data centers and personal computing environments.

The inclusion of On-Die Error-Correction Code (ODECC) enhances data reliability by virtually eliminating single-bit errors, which is crucial for maintaining data integrity in high-demand tasks. The 288-pin UDIMM form factor ensures compatibility with a wide range of motherboards that support DDR5 memory.

Overall, the Samsung 8GB DDR5 4800MHz RAM module is an excellent choice for users looking to upgrade their systems with the latest memory technology, offering a balance of high performance, energy efficiency, and robust reliability.

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